Infineon OptiMOS™ Silicon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L08ATMA2

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Subtotal (1 pack of 15 units)*

£12.195

(exc. VAT)

£14.64

(inc. VAT)

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  • Plus 11,655 unit(s) shipping from 09 October 2025
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Per unit
Per Pack*
15 - 60£0.813£12.20
75 - 135£0.772£11.58
150 - 360£0.739£11.09
375 - 735£0.707£10.61
750 +£0.658£9.87

*price indicative

Packaging Options:
RS Stock No.:
222-4666
Mfr. Part No.:
IPD50N06S4L08ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0078 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications

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