Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode, 90 A, 60 V, 3-Pin DPAK IPD90N06S407ATMA2
- RS Stock No.:
- 220-7413
- Mfr. Part No.:
- IPD90N06S407ATMA2
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£990.00
(exc. VAT)
£1,187.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.396 | £990.00 |
*price indicative
- RS Stock No.:
- 220-7413
- Mfr. Part No.:
- IPD90N06S407ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-252 | |
| Series | OptiMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0069 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 20V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-252 | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0069 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 20V | ||
Number of Elements per Chip 1 | ||
The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩ.The new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
100% Avalanche tested
Ultra low RDSon
world's lowest RDS at 60V (on)
highest current capability
lowest switching and conduction power losses for highest thermal efficiency
robust packages with superior quality and reliability
Optimized total gate charge enables smaller driver output stages
MSL1 up to 260°C peak reflow
175°C operating temperature
100% Avalanche tested
Ultra low RDSon
world's lowest RDS at 60V (on)
highest current capability
lowest switching and conduction power losses for highest thermal efficiency
robust packages with superior quality and reliability
Optimized total gate charge enables smaller driver output stages
Related links
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 60 V, 3-Pin DPAK IPD90N06S407ATMA2
- Infineon OptiMOS™ P-Channel MOSFET Transistor & Diode 30 V, 3-Pin DPAK IPD90P03P4L04ATMA2
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2
- Infineon OptiMOS™ P-Channel MOSFET Transistor & Diode 40 V, 3-Pin DPAK IPD70P04P4L08ATMA2
- Infineon CoolMOS™ C7 N-Channel MOSFET Transistor & Diode 700 V, 3-Pin DPAK IPD65R190C7ATMA1
- Infineon CoolMOS™ N-Channel MOSFET Transistor & Diode 650 V, 3-Pin DPAK IPD60R170CFD7ATMA1
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 150 V, 3-Pin DPAK IRFR24N15DTRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK AUIRFR48ZTRL