Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode, 90 A, 60 V, 3-Pin DPAK IPD90N06S407ATMA2

Subtotal (1 reel of 2500 units)*

£990.00

(exc. VAT)

£1,187.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.396£990.00

*price indicative

RS Stock No.:
220-7413
Mfr. Part No.:
IPD90N06S407ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0069 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

1

The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩ.The new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK.

N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
100% Avalanche tested
Ultra low RDSon
world's lowest RDS at 60V (on)
highest current capability
lowest switching and conduction power losses for highest thermal efficiency
robust packages with superior quality and reliability
Optimized total gate charge enables smaller driver output stages

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