Infineon OptiMOS Type N-Channel MOSFET & Diode, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S407ATMA2

RS Stock No.:: 220-7414
Mfr. Part No.:: IPD90N06S407ATMA2
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET & Diode, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S407ATMA2

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Subtotal (1 pack of 10 units)*

£5.13

(exc. VAT)

£6.16

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,450 unit(s) ready to ship

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Units	Per unit	Per Pack*
10 - 90	£0.513	£5.13
100 - 240	£0.487	£4.87
250 - 490	£0.477	£4.77
500 - 990	£0.446	£4.46
1000 +	£0.416	£4.16

*price indicative

RS Stock No.:: 220-7414
Mfr. Part No.:: IPD90N06S407ATMA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.9mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	79W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	43nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22 mm
	Height	2.41mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.9mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 79W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 43nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Standards/Approvals No
	Width 6.22 mm
	Height 2.41mm
	Automotive Standard AEC-Q101

Datasheet - IPD90N06S407ATMA2

The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩ.The new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

Ultra low RDSon

world's lowest RDS at 60V (on)

highest current capability

lowest switching and conduction power losses for highest thermal efficiency

robust packages with superior quality and reliability

Optimized total gate charge enables smaller driver output stages