N-Channel MOSFET Transistor & Diode, 70 A, 120 V, 3-Pin D2PAK Infineon IPB70N12S311ATMA1

RS Stock No.:: 220-7395
Mfr. Part No.:: IPB70N12S311ATMA1
Brand:: Infineon

N-Channel MOSFET Transistor & Diode, 70 A, 120 V, 3-Pin D2PAK Infineon IPB70N12S311ATMA1

990 In stock - FREE next working day delivery available

Added

Price Each (In a Pack of 5)

£1.81

(exc. VAT)

£2.17

(inc. VAT)

Units	Per unit	Per Pack*
5 - 20	£1.81	£9.05
25 - 45	£1.63	£8.15
50 - 120	£1.52	£7.60
125 - 245	£1.412	£7.06
250 +	£1.304	£6.52
*price indicative

RS Stock No.:: 220-7395
Mfr. Part No.:: IPB70N12S311ATMA1
Brand:: Infineon

Technical Reference

Datasheet - IPB70N12S311ATMA1

Legislation and Compliance

Product Details

The Infineon offers a wide portfolio on Automotive power MOSFETs with a voltage of 120V, 150V, 200V, 250V and 300V targeting applications such inverters for Light Electric Vehicles (LSEV, e-Motorcycles, e-Scooters), DC/AC conversion, and On-Board Chargers as well as HV-12V DC/DC Synchronous Rectification for Battery Electric Vehicles (BEV)for the emerging 48V market, check out our newly released 100V products in TOLL (HSOF-8), TOLG (HSOG-8) and SSO8 (TDSON-8).

OptiMOSTM - power MOSFET for automotive applications
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	70 A
Maximum Drain Source Voltage	120 V
Package Type	D2PAK (TO-263)
Series	OptiMOS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	0.0113 O
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Number of Elements per Chip	1

RS Stock No.:: 220-7395
Mfr. Part No.:: IPB70N12S311ATMA1
Brand:: Infineon

Datasheet - IPB70N12S311ATMA1

N-Channel MOSFET Transistor & Diode, 70 A, 120 V, 3-Pin D2PAK Infineon IPB70N12S311ATMA1

Technical Reference

Legislation and Compliance

Product Details

Specifications

Related links