Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode, 100 A, 75 V, 3-Pin D2PAK IPB100N08S2L07ATMA1

Subtotal (1 pack of 5 units)*

£15.62

(exc. VAT)

£18.745

(inc. VAT)

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Packaging Options:
RS Stock No.:
220-7387
Mfr. Part No.:
IPB100N08S2L07ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.00065 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

The Infineon offers a wide range of 75V-100V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in various packages a RDS(on) range from 1.2mΩ up to 190mΩ by reducing CO2 emissions of passenger cars is accelerating the 48V board net adoption and therefore the 48V like starter generators (main inverter), battery main switches, DCDC converter as well as 48V auxiliaries. For this emerging market, Infineon is offering a broad portfolio of Automotive 80V and 100V MOSFETs, that are housed in different package types like TOLL (HSOF-8), TOLG (HSOG-8), TOLT (HDSOP-16), SSO8 (TDSON-8) and S308 (TSDSON-8), in order to provide solutions for different power requirements as well as different cooling concepts on electronic control unit (ECU) level. Next to the 48V applications the 80V and 100V MOSFETs are also used for example in LED lighting, fuel injection as well as in-vehicle wireless charging.

N-channel Logic Level - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature

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