Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode, 70 A, 120 V, 3-Pin D2PAK IPB70N12S311ATMA1

Subtotal (1 reel of 1000 units)*

£625.00

(exc. VAT)

£750.00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +£0.625£625.00

*price indicative

RS Stock No.:
220-7394
Mfr. Part No.:
IPB70N12S311ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

120 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0113 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Infineon offers a wide portfolio on Automotive power MOSFETs with a voltage of 120V, 150V, 200V, 250V and 300V targeting applications such inverters for Light Electric Vehicles (LSEV, e-Motorcycles, e-Scooters), DC/AC conversion, and On-Board Chargers as well as HV-12V DC/DC Synchronous Rectification for Battery Electric Vehicles (BEV)for the emerging 48V market, check out our newly released 100V products in TOLL (HSOF-8), TOLG (HSOG-8) and SSO8 (TDSON-8).

OptiMOSTM - power MOSFET for automotive applications
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature

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