Infineon OptiMOS SiC N-Channel MOSFET, 331 A, 120 V, 16-Pin PG-HDSOP-16 IPTC017N12NM6ATMA1
- RS Stock No.:
- 284-692
- Mfr. Part No.:
- IPTC017N12NM6ATMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 284-692
- Mfr. Part No.:
- IPTC017N12NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 331 A | |
| Maximum Drain Source Voltage | 120 V | |
| Series | OptiMOS | |
| Package Type | PG-HDSOP-16 | |
| Mounting Type | Surface Mount | |
| Pin Count | 16 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 331 A | ||
Maximum Drain Source Voltage 120 V | ||
Series OptiMOS | ||
Package Type PG-HDSOP-16 | ||
Mounting Type Surface Mount | ||
Pin Count 16 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET features an OptiMOS 6 Power Transistor is engineered for exceptional performance in high frequency switching applications. With a robust design, this MOSFET transistor features an N channel configuration that ensures minimal on state resistance and optimised gate charge characteristics, making it ideal for modern electronic circuits. Its high avalanche energy rating and wide operating temperature range up to 175°C further enhance reliability across diverse industrial applications. Encased in a PG HDSOP 16 package, this product combines compact sizing with high thermal performance, making it a valuable choice for engineers seeking reliable and efficient solutions for power management in demanding environments.
N channel configuration for superior control
Very low on resistance reduces energy losses
Optimised gate charge for faster switching
High avalanche energy boosts circuit robustness
Reliable operation at elevated temperatures
Compact PG HDSOP 16 package maximises space
Pb free lead plating for eco friendly designs
Halogen free promoting sustainability in electronics
Very low on resistance reduces energy losses
Optimised gate charge for faster switching
High avalanche energy boosts circuit robustness
Reliable operation at elevated temperatures
Compact PG HDSOP 16 package maximises space
Pb free lead plating for eco friendly designs
Halogen free promoting sustainability in electronics
Related links
- Infineon OptiMOS SiC N-Channel MOSFET 120 V, 16-Pin PG-HDSOP-16 IPTC017N12NM6ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 120 V, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 16-Pin PG-HDSOP-16 IPTC012N06NM5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 16-Pin PG-HDSOP-16 IPTC007N06NM5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 16-Pin PG-HDSOP-16-1 IAUTN06S5N008TATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 120 V, 8-Pin PG-HSOF-8 IPT017N12NM6ATMA1
- Infineon IML SiC N-Channel MOSFET 650 V, 16-Pin PG-HDSOP-16 IMLT65R040M2HXTMA1
- Infineon IML SiC N-Channel MOSFET 650 V, 16-Pin PG-HDSOP-16 IMLT65R050M2HXTMA1