Infineon OptiMOS SiC N-Channel MOSFET, 331 A, 120 V, 16-Pin PG-HDSOP-16 IPTC017N12NM6ATMA1

The Infineon MOSFET features an OptiMOS 6 Power Transistor is engineered for exceptional performance in high frequency switching applications. With a robust design, this MOSFET transistor features an N channel configuration that ensures minimal on state resistance and optimised gate charge characteristics, making it ideal for modern electronic circuits. Its high avalanche energy rating and wide operating temperature range up to 175°C further enhance reliability across diverse industrial applications. Encased in a PG HDSOP 16 package, this product combines compact sizing with high thermal performance, making it a valuable choice for engineers seeking reliable and efficient solutions for power management in demanding environments.

N channel configuration for superior control
Very low on resistance reduces energy losses
Optimised gate charge for faster switching
High avalanche energy boosts circuit robustness
Reliable operation at elevated temperatures
Compact PG HDSOP 16 package maximises space
Pb free lead plating for eco friendly designs
Halogen free promoting sustainability in electronics