Infineon OptiMOS SiC N-Channel MOSFET, 309 A, 120 V, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1

The Infineon OptiMOS 5 Automotive Power MOSFET offers exceptional performance and reliability for automotive applications. With its N channel enhancement mode design, this power transistor is engineered to meet the stringent requirements of the automotive sector, ensuring superior efficiency and robust functionality. Boasting an extended qualification beyond AEC Q101, it undergoes enhanced electrical testing to guarantee durability even in harsh environments. This device supports a wide operating temperature range, making it suitable for diverse automotive conditions. Its low on state resistance and high continuous drain current capability make this MOSFET an ideal choice for demanding power management tasks, ensuring that vehicle performance remains uncompromised.

Designed for automotive compliance
Robust for challenging environments
Enhanced testing for reliability
Excellent thermal performance
High efficiency with minimal loss
Avalanche rated for energy transients
MSL1 classification up to 260°C
Advanced gate charge for efficient switching