Name: Infineon OptiMOS SiC N-Channel MOSFET, 309 A, 120 V, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1
Brand: Infineon
SKU: 284-710
Price: 4.82 GBP
Availability: OutOfStock

The Infineon OptiMOS 5 Automotive Power MOSFET offers exceptional performance and reliability for automotive applications. With its N channel enhancement mode design, this power transistor is engineered to meet the stringent requirements of the automotive sector, ensuring superior efficiency and robust functionality. Boasting an extended qualification beyond AEC Q101, it undergoes enhanced electrical testing to guarantee durability even in harsh environments. This device supports a wide operating temperature range, making it suitable for diverse automotive conditions. Its low on state resistance and high continuous drain current capability make this MOSFET an ideal choice for demanding power management tasks, ensuring that vehicle performance remains uncompromised.

Designed for automotive compliance
Robust for challenging environments
Enhanced testing for reliability
Excellent thermal performance
High efficiency with minimal loss
Avalanche rated for energy transients
MSL1 classification up to 260°C
Advanced gate charge for efficient switching

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	309 A
	Maximum Drain Source Voltage	120 V
	Package Type	PG-HDSOP-16-1
	Series	OptiMOS
	Mounting Type	Surface Mount
	Pin Count	16
	Channel Mode	Enhancement
	Transistor Material	SiC
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 309 A
	Maximum Drain Source Voltage 120 V
	Package Type PG-HDSOP-16-1
	Series OptiMOS
	Mounting Type Surface Mount
	Pin Count 16
	Channel Mode Enhancement
	Transistor Material SiC
	Number of Elements per Chip 1

Infineon OptiMOS SiC N-Channel MOSFET, 309 A, 120 V, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1

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