Infineon IML SiC N-Channel MOSFET, 107 A, 650 V, 16-Pin PG-HDSOP-16 IMLT65R020M2HXTMA1
- RS Stock No.:
- 349-048
- Mfr. Part No.:
- IMLT65R020M2HXTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£16.07
(exc. VAT)
£19.28
(inc. VAT)
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Temporarily out of stock
- Shipping from 13 September 2027
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Units | Per unit |
|---|---|
| 1 - 9 | £16.07 |
| 10 - 99 | £14.46 |
| 100 + | £13.34 |
*price indicative
- RS Stock No.:
- 349-048
- Mfr. Part No.:
- IMLT65R020M2HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 107 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | IML | |
| Package Type | PG-HDSOP-16 | |
| Mounting Type | Surface Mount | |
| Pin Count | 16 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 107 A | ||
Maximum Drain Source Voltage 650 V | ||
Series IML | ||
Package Type PG-HDSOP-16 | ||
Mounting Type Surface Mount | ||
Pin Count 16 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, providing unparalleled performance, superior reliability, and excellent ease of use. Designed to meet the demands of modern power systems, this MOSFET enables cost effective, highly efficient, and simplified designs. It is the ideal solution for addressing the ever-growing needs of power systems and markets, offering both high performance and energy efficiency for a wide range of applications.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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