Name: Infineon IML SiC N-Channel MOSFET, 47 A, 650 V, 16-Pin PG-HDSOP-16 IMLT65R050M2HXTMA1
Brand: Infineon
SKU: 349-051
Price: 8.68 GBP
Availability: OutOfStock

The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, providing unparalleled performance, superior reliability, and excellent ease of use. Designed to meet the demands of modern power systems, this MOSFET enables cost effective, highly efficient, and simplified designs. It is the ideal solution for addressing the ever-growing needs of power systems and markets, offering both high performance and energy efficiency for a wide range of applications.

Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	47 A
	Maximum Drain Source Voltage	650 V
	Series	IML
	Package Type	PG-HDSOP-16
	Mounting Type	Surface Mount
	Pin Count	16
	Channel Mode	Enhancement
	Number of Elements per Chip	1
	Transistor Material	SiC

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 47 A
	Maximum Drain Source Voltage 650 V
	Series IML
	Package Type PG-HDSOP-16
	Mounting Type Surface Mount
	Pin Count 16
	Channel Mode Enhancement
	Number of Elements per Chip 1
	Transistor Material SiC

Infineon IML SiC N-Channel MOSFET, 47 A, 650 V, 16-Pin PG-HDSOP-16 IMLT65R050M2HXTMA1

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