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Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2

RS Stock No.:: 220-7416
Mfr. Part No.:: IPD90P03P4L04ATMA2
Brand:: Infineon

Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2

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Subtotal (1 pack of 5 units)*

£8.30

(exc. VAT)

£9.95

(inc. VAT)

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In Stock

4,805 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 - 45	£1.66	£8.30
50 - 120	£1.478	£7.39
125 - 245	£1.378	£6.89
250 - 495	£1.294	£6.47
500 +	£1.196	£5.98

*price indicative

RS Stock No.:: 220-7416
Mfr. Part No.:: IPD90P03P4L04ATMA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.1mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.3V
	Typical Gate Charge Qg @ Vgs	125nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	137W
	Maximum Gate Source Voltage Vgs	5 V
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Height	2.41mm
	Standards/Approvals	No
	Width	6.22 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.1mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.3V
	Typical Gate Charge Qg @ Vgs 125nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 137W
	Maximum Gate Source Voltage Vgs 5 V
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Height 2.41mm
	Standards/Approvals No
	Width 6.22 mm
	Automotive Standard AEC-Q101

Datasheet - IPD90P03P4L04ATMA2

The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.

P-channel - Logic Level - Enhancement mode

No charge pump required for high side drive.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

Lowest switching and conduction power losses for highest thermal efficiency