Infineon OptiMOS P P-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90P04P4L04ATMA1
- RS Stock No.:
- 827-5230
- Mfr. Part No.:
- IPD90P04P4L04ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£37.34
(exc. VAT)
£44.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | £1.867 | £37.34 |
| 40 - 80 | £1.773 | £35.46 |
| 100 - 180 | £1.699 | £33.98 |
| 200 - 480 | £1.624 | £32.48 |
| 500 + | £1.512 | £30.24 |
*price indicative
- RS Stock No.:
- 827-5230
- Mfr. Part No.:
- IPD90P04P4L04ATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Series | OptiMOS P | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 135 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.41mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS P | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Transistor Material Si | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 135 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 2.41mm | ||
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