Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1
- RS Stock No.:
- 826-9109
- Mfr. Part No.:
- IPD50P04P413ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£20.40
(exc. VAT)
£24.475
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 14,725 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | £0.816 | £20.40 |
| 50 - 100 | £0.636 | £15.90 |
| 125 - 225 | £0.595 | £14.88 |
| 250 - 600 | £0.555 | £13.88 |
| 625 + | £0.514 | £12.85 |
*price indicative
- RS Stock No.:
- 826-9109
- Mfr. Part No.:
- IPD50P04P413ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 58W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Width | 6.22 mm | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 58W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Width 6.22 mm | ||
Height 2.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q | ||
RoHS Status: Not Applicable
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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