Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1
- RS Stock No.:
- 826-9109
- Mfr. Part No.:
- IPD50P04P413ATMA1
- Brand:
- Infineon
Subtotal (1 pack of 25 units)*
£20.40
(exc. VAT)
£24.475
(inc. VAT)
FREE delivery for orders over £50.00
- Final 14,725 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
25 - 25 | £0.816 | £20.40 |
50 - 100 | £0.636 | £15.90 |
125 - 225 | £0.595 | £14.88 |
250 - 600 | £0.555 | £13.88 |
625 + | £0.514 | £12.85 |
*price indicative
- RS Stock No.:
- 826-9109
- Mfr. Part No.:
- IPD50P04P413ATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 50 A | |
Maximum Drain Source Voltage | 40 V | |
Series | OptiMOS P | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 12.6 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 58 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 39 nC @ 10 V | |
Length | 6.5mm | |
Maximum Operating Temperature | +175 °C | |
Width | 6.22mm | |
Transistor Material | Si | |
Height | 2.3mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 40 V | ||
Series OptiMOS P | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 58 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 39 nC @ 10 V | ||
Length 6.5mm | ||
Maximum Operating Temperature +175 °C | ||
Width 6.22mm | ||
Transistor Material Si | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
Infineon OptiMOS™P P-Channel Power MOSFETs
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Related links
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin DPAK IPD50P04P413ATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin DPAK IPD042P03L3GATMA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin DPAK IPD90P04P4L04ATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin DPAK IPD90P03P4L04ATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin D2PAK IPB45P03P4L11ATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin SOT-23 BSS308PEH6327XTSA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin D2PAK IPB80P04P4L04ATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin SOT-23 BSS314PEH6327XTSA1