Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS P

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.5mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

6.22mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.3mm