P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK Infineon IPD50P04P413ATMA1

RS Stock No.:: 165-5949
Mfr. Part No.:: IPD50P04P413ATMA1
Brand:: Infineon

P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK Infineon IPD50P04P413ATMA1

14975 In stock - FREE next working day delivery available

Price Each (On a Reel of 2500)

£0.453

(exc. VAT)

£0.544

(inc. VAT)

Units	Per unit	Per Reel*
2500 +	£0.453	£1,132.50

*price indicative

RS Stock No.:: 165-5949
Mfr. Part No.:: IPD50P04P413ATMA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

RoHS Status: Exempt

COO (Country of Origin):: CN

Product Details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	40 V
Series	OptiMOS P
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	12.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	58 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	6.22mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	39 nC @ 10 V
Length	6.5mm
Transistor Material	Si
Height	2.3mm
Minimum Operating Temperature	-55 °C