Infineon OptiMOS P P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P4L04ATMA1
- RS Stock No.:
- 753-3033
- Mfr. Part No.:
- IPD90P03P4L04ATMA1
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£2.50
(exc. VAT)
£3.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 35 unit(s) shipping from 08 September 2025
- Plus 1,235 unit(s) shipping from 15 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £0.50 | £2.50 |
*price indicative
- RS Stock No.:
- 753-3033
- Mfr. Part No.:
- IPD90P03P4L04ATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS P | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 137 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +5 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 125 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Length | 6.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.3mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS P | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 137 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +5 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 125 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Transistor Material Si | ||
Length 6.5mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.3mm | ||
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