Infineon OptiMOS P P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P4L04ATMA1

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£3.00

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Packaging Options:
RS Stock No.:
753-3033
Mfr. Part No.:
IPD90P03P4L04ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Series

OptiMOS P

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

137 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +5 V

Width

6.22mm

Typical Gate Charge @ Vgs

125 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Length

6.5mm

Minimum Operating Temperature

-55 °C

Height

2.3mm

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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