Infineon OptiMOS P P-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220 IPP120P04P4L03AKSA1
- RS Stock No.:
- 145-9267
- Mfr. Part No.:
- IPP120P04P4L03AKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£117.00
(exc. VAT)
£140.50
(inc. VAT)
FREE delivery for orders over £50.00
- Final 1,300 unit(s), ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £2.34 | £117.00 |
100 - 200 | £2.223 | £111.15 |
250 - 450 | £2.106 | £105.30 |
500 + | £1.989 | £99.45 |
*price indicative
- RS Stock No.:
- 145-9267
- Mfr. Part No.:
- IPP120P04P4L03AKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 120 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | TO-220 | |
Series | OptiMOS P | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5.2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 136 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Width | 4.4mm | |
Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Length | 10mm | |
Height | 15.65mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220 | ||
Series OptiMOS P | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 136 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 4.4mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10mm | ||
Height 15.65mm | ||
Minimum Operating Temperature -55 °C | ||
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