Infineon OptiMOS P P-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90P04P4L04ATMA1

Subtotal (1 reel of 2500 units)*

£2,690.00

(exc. VAT)

£3,227.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£1.076£2,690.00

*price indicative

RS Stock No.:
124-8767
Mfr. Part No.:
IPD90P04P4L04ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

OptiMOS P

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Length

6.73mm

Width

6.22mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

135 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

COO (Country of Origin):
CN

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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