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Infineon OptiMOS P P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 BSS223PWH6327XTSA1

RS Stock No.:: 826-9991
Mfr. Part No.:: BSS223PWH6327XTSA1
Brand:: Infineon

Infineon OptiMOS P P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 BSS223PWH6327XTSA1

Bulk discount available

Subtotal (1 reel of 500 units)*

£37.50

(exc. VAT)

£45.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

11,000 unit(s) ready to ship

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Units	Per unit	Per Reel*
500 - 500	£0.075	£37.50
1000 - 2000	£0.071	£35.50
2500 - 4500	£0.068	£34.00
5000 - 12000	£0.064	£32.00
12500 +	£0.06	£30.00

*price indicative

RS Stock No.:: 826-9991
Mfr. Part No.:: BSS223PWH6327XTSA1
Brand:: Infineon

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

Infineon OptiMOS P Series MOSFET, 310 mA Maximum Continuous Drain Current, 250 mW Maximum Power Dissipation - BSS223PWH6327XTSA1

This MOSFET serves as a crucial element in electronic circuits, acting as a switch or amplifier in numerous applications. Its P-channel design and enhancement mode characteristics enable efficient current control in surface-mounted electronic systems. The component's high-temperature operation capability makes it suitable for automotive and industrial applications where performance in extreme conditions is essential.

Features & Benefits

• Enhances efficiency with low on-resistance of 1.2Ω
• Supports high-temperature operations up to 150°C
• Provides robust performance with a maximum voltage rating of 20V
• Suitable for high-speed switching with minimal delay times
• Complies with AEC-Q101 standards for automotive applications
• Delivers consistent operation with low gate charge characteristics

Applications

• Driving loads in automotive
• Utilised in battery management systems for electric vehicles
• Implemented in power management circuits for consumer electronics
• Employed in amplifiers for audio and electronic devices
• Applied in various automation systems requiring efficient switching

What is the maximum current the component can handle?

The maximum continuous drain current it can handle is 310mA at 25°C, ensuring dependable operation under specified conditions.

How is this component optimised for high-temperature environments?

It is designed to withstand operating temperatures up to +150°C, making it suitable for use in challenging applications.

What type of mounting does this transistor accommodate?

This component is intended for surface mount assembly, facilitating its integration into compact electronic systems.

Does it comply with any automotive standards?

Yes, it is qualified according to AEC-Q101, meeting stringent reliability standards for automotive applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	310 mA
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-323
	Series	OptiMOS P
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	2.1 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.2V
	Minimum Gate Threshold Voltage	0.6V
	Maximum Power Dissipation	250 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Typical Gate Charge @ Vgs	0.5 nC @ 4.5 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Length	2mm
	Width	1.25mm
	Maximum Operating Temperature	+150 °C
	Forward Diode Voltage	1.33V
	Height	0.8mm
	Minimum Operating Temperature	-55 °C
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 310 mA
	Maximum Drain Source Voltage 20 V
	Package Type SOT-323
	Series OptiMOS P
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 2.1 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.2V
	Minimum Gate Threshold Voltage 0.6V
	Maximum Power Dissipation 250 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Typical Gate Charge @ Vgs 0.5 nC @ 4.5 V
	Number of Elements per Chip 1
	Transistor Material Si
	Length 2mm
	Width 1.25mm
	Maximum Operating Temperature +150 °C
	Forward Diode Voltage 1.33V
	Height 0.8mm
	Minimum Operating Temperature -55 °C
	Automotive Standard AEC-Q101

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