P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1

RS Stock No.:: 826-9991
Mfr. Part No.:: BSS223PWH6327XTSA1
Brand:: Infineon

P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1

15000 In stock - FREE next working day delivery available

Price Each (On a Reel of 500)

£0.075

(exc. VAT)

£0.09

(inc. VAT)

Units	Per unit	Per Reel*
500 - 500	£0.075	£37.50
1000 - 2000	£0.071	£35.50
2500 - 4500	£0.068	£34.00
5000 - 12000	£0.064	£32.00
12500 +	£0.06	£30.00

*price indicative

RS Stock No.:: 826-9991
Mfr. Part No.:: BSS223PWH6327XTSA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

Product Details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	310 mA
Maximum Drain Source Voltage	20 V
Series	OptiMOS P
Package Type	SOT-323
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.1 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.2V
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	250 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	1.25mm
Length	2mm
Typical Gate Charge @ Vgs	0.5 nC @ 4.5 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	0.8mm