Infineon OptiMOS P P-Channel MOSFET, 14.9 A, 20 V, 8-Pin SOIC BSO201SPHXUMA1
- RS Stock No.:
- 165-5906
- Mfr. Part No.:
- BSO201SPHXUMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£1,242.50
(exc. VAT)
£1,490.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.497 | £1,242.50 |
*price indicative
- RS Stock No.:
- 165-5906
- Mfr. Part No.:
- BSO201SPHXUMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 14.9 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | OptiMOS P | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 66 nC @ 4.5 V | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.65mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 14.9 A | ||
Maximum Drain Source Voltage 20 V | ||
Series OptiMOS P | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 66 nC @ 4.5 V | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.65mm | ||
Minimum Operating Temperature -55 °C | ||
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