Infineon OptiMOS P P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3EGATMA1

Subtotal (1 pack of 20 units)*

£8.56

(exc. VAT)

£10.28

(inc. VAT)

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20 +£0.428£8.56

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Packaging Options:
RS Stock No.:
825-9134
Mfr. Part No.:
BSZ086P03NS3EGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

TSDSON

Series

OptiMOS P

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

3.1V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Transistor Material

Si

Width

3.4mm

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

43.2 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

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