Infineon OptiMOS P P-Channel MOSFET, 14.9 A, 20 V, 8-Pin SOIC BSO201SPHXUMA1
- RS Stock No.:
- 827-5356
- Mfr. Part No.:
- BSO201SPHXUMA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£5.99
(exc. VAT)
£7.19
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,420 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £0.599 | £5.99 |
*price indicative
- RS Stock No.:
- 827-5356
- Mfr. Part No.:
- BSO201SPHXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 14.9 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOIC | |
| Series | OptiMOS P | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 66 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.65mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 14.9 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOIC | ||
Series OptiMOS P | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 66 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.65mm | ||
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS P P-Channel MOSFET 20 V, 8-Pin SOIC BSO201SPHXUMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin DPAK IPD042P03L3GATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 8-Pin DSO BSO200P03SHXUMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin D2PAK IPB45P03P4L11ATMA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin DPAK IPD90P04P4L04ATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin TO-220 IPP80P03P4L04AKSA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin D2PAK IPB80P04P4L04ATMA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin TO-220 IPP120P04P4L03AKSA1