Name: Infineon OptiMOS P P-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC060P03NS3EGATMA1
Brand: Infineon
SKU: 825-9266
Price: 0.83 GBP
Availability: BackOrder

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Units	Per unit	Per Pack*
10 - 90	£0.694	£6.94
100 - 190	£0.497	£4.97
200 +	£0.489	£4.89

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	100 A
	Maximum Drain Source Voltage	30 V
	Package Type	TDSON
	Series	OptiMOS P
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	9.6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.9V
	Minimum Gate Threshold Voltage	3.1V
	Maximum Power Dissipation	83 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Width	5.35mm
	Length	6.35mm
	Typical Gate Charge @ Vgs	61 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	1.1mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 100 A
	Maximum Drain Source Voltage 30 V
	Package Type TDSON
	Series OptiMOS P
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 9.6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.9V
	Minimum Gate Threshold Voltage 3.1V
	Maximum Power Dissipation 83 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Width 5.35mm
	Length 6.35mm
	Typical Gate Charge @ Vgs 61 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 1.1mm

Infineon OptiMOS P P-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC060P03NS3EGATMA1

FREE delivery for orders over £50.00

Infineon OptiMOS™P P-Channel Power MOSFETs

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