Infineon OptiMOS P P-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC060P03NS3EGATMA1

Subtotal (1 reel of 5000 units)*

£2,140.00

(exc. VAT)

£2,570.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +£0.428£2,140.00

*price indicative

RS Stock No.:
165-6578
Mfr. Part No.:
BSC060P03NS3EGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Series

OptiMOS P

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

3.1V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.35mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

COO (Country of Origin):
CN

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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