P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1
- RS Stock No.:
- 165-6879
- Mfr. Part No.:
- BSZ086P03NS3EGATMA1
- Brand:
- Infineon
14140 In stock - FREE next working day delivery available
Price Each (On a Reel of 5000)
£0.267
(exc. VAT)
£0.32
(inc. VAT)
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.267 | £1,335.00 |
*price indicative
- RS Stock No.:
- 165-6879
- Mfr. Part No.:
- BSZ086P03NS3EGATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Voltage | 30 V |
| Series | OptiMOS P |
| Package Type | TSDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 13.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.9V |
| Minimum Gate Threshold Voltage | 3.1V |
| Maximum Power Dissipation | 69 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Operating Temperature | +150 °C |
| Width | 3.4mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 43.2 nC @ 10 V |
| Length | 3.4mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.1mm |
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