Infineon OptiMOS P P-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC030P03NS3GAUMA1

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS P

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC @ 10 V

Length

6.1mm

Width

5.35mm

Number of Elements per Chip

1

Height

1.1mm

Forward Diode Voltage

1.1V

Minimum Operating Temperature

-55 °C