Infineon OptiMOS P P-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-23 BSS314PEH6327XTSA1

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Subtotal (1 reel of 3000 units)*

£177.00

(exc. VAT)

£213.00

(inc. VAT)

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Per Reel*
3000 - 3000£0.059£177.00
6000 - 12000£0.056£168.00
15000 +£0.052£156.00

*price indicative

RS Stock No.:
165-8258
Mfr. Part No.:
BSS314PEH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Series

OptiMOS P

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

0.1mm

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

2.9 nC @ 10 V

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.3mm

Forward Diode Voltage

1.1V

COO (Country of Origin):
CN

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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