Infineon OptiMOS P P-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-23 BSS314PEH6327XTSA1
- RS Stock No.:
- 165-8258
- Mfr. Part No.:
- BSS314PEH6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£177.00
(exc. VAT)
£213.00
(inc. VAT)
FREE delivery for orders over £50.00
- 9,000 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
3000 - 3000 | £0.059 | £177.00 |
6000 - 12000 | £0.056 | £168.00 |
15000 + | £0.052 | £156.00 |
*price indicative
- RS Stock No.:
- 165-8258
- Mfr. Part No.:
- BSS314PEH6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 1.5 A | |
Maximum Drain Source Voltage | 30 V | |
Series | OptiMOS P | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 230 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 500 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Width | 0.1mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 2.9 nC @ 10 V | |
Length | 2.9mm | |
Height | 1.3mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.1V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS P | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 230 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 0.1mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 2.9 nC @ 10 V | ||
Length 2.9mm | ||
Height 1.3mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™P P-Channel Power MOSFETs
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
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