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Infineon OptiMOS Type P-Channel MOSFET & Diode, 70 A, 40 V Enhancement, 3-Pin TO-252 IPD70P04P4L08ATMA2

RS Stock No.:: 220-7412
Mfr. Part No.:: IPD70P04P4L08ATMA2
Brand:: Infineon

Infineon OptiMOS Type P-Channel MOSFET & Diode, 70 A, 40 V Enhancement, 3-Pin TO-252 IPD70P04P4L08ATMA2

Subtotal (1 pack of 10 units)*

£3.29

(exc. VAT)

£3.95

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

420 unit(s) ready to ship
Plus 2,500 unit(s) shipping from 19 February 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 +	£0.329	£3.29

*price indicative

RS Stock No.:: 220-7412
Mfr. Part No.:: IPD70P04P4L08ATMA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	71nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	5 V
	Forward Voltage Vf	-1.3V
	Maximum Power Dissipation Pd	75W
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22 mm
	Height	2.41mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 71nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 5 V
	Forward Voltage Vf -1.3V
	Maximum Power Dissipation Pd 75W
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Standards/Approvals No
	Width 6.22 mm
	Height 2.41mm
	Automotive Standard AEC-Q101

Datasheet - IPD70P04P4L08ATMA2

The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.

P-channel - Logic Level - Enhancement mode

No charge pump required for high side drive.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

Lowest switching and conduction power losses for highest thermal efficiency