Vishay E N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3

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Subtotal (1 pack of 10 units)*

£3.19

(exc. VAT)

£3.83

(inc. VAT)

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Being discontinued
  • Final 2,700 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90£0.319£3.19
100 - 240£0.311£3.11
250 - 490£0.303£3.03
500 - 990£0.295£2.95
1000 +£0.287£2.87

*price indicative

Packaging Options:
RS Stock No.:
210-4997
Mfr. Part No.:
SIHU2N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

800 V

Series

E

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

The Vishay E Series Power MOSFET has IPAK (TO-251) package type.

Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection

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