Vishay E N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3
- RS Stock No.:
- 210-4995
- Mfr. Part No.:
- SIHU2N80AE-GE3
- Brand:
- Vishay
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 210-4995
- Mfr. Part No.:
- SIHU2N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.9 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | IPAK (TO-251) | |
| Series | E | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 Ω | |
| Maximum Gate Threshold Voltage | 2 → 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.9 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type IPAK (TO-251) | ||
Series E | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 Ω | ||
Maximum Gate Threshold Voltage 2 → 4V | ||
Number of Elements per Chip 1 | ||
The Vishay E Series Power MOSFET has IPAK (TO-251) package type.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
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