Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK SIHU4N80AE-GE3
- RS Stock No.:
- 188-4879
- Mfr. Part No.:
- SIHU4N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 75 units)*
£75.675
(exc. VAT)
£90.825
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 13 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | £1.009 | £75.68 |
| 150 - 300 | £0.756 | £56.70 |
| 375 + | £0.625 | £46.88 |
*price indicative
- RS Stock No.:
- 188-4879
- Mfr. Part No.:
- SIHU4N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.1 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.44 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 62.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 6.73mm | |
| Width | 2.38mm | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 6.22mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.1 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.44 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 62.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 6.73mm | ||
Width 2.38mm | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 6.22mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
E Series Power MOSFET
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low effective capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
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