N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK Vishay SIHU4N80AE-GE3

RS Stock No.:: 188-4879
Mfr. Part No.:: SIHU4N80AE-GE3
Brand:: Vishay

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK Vishay SIHU4N80AE-GE3

Available to back order for despatch 10/09/2024

Price Each (In a Tube of 75)

£0.99

(exc. VAT)

£1.19

(inc. VAT)

Units	Per unit	Per Tube*
75 - 75	£0.99	£74.25
150 - 300	£0.742	£55.65
375 +	£0.614	£46.05
*price indicative

RS Stock No.:: 188-4879
Mfr. Part No.:: SIHU4N80AE-GE3
Brand:: Vishay

Datasheet SIHU4N80AE-GE3

RS Stock No.:: 188-4879
Mfr. Part No.:: SIHU4N80AE-GE3
Brand:: Vishay

Datasheet SIHU4N80AE-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.1 A
Maximum Drain Source Voltage	800 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.44 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Width	2.38mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	6.73mm
Typical Gate Charge @ Vgs	11 nC @ 10 V
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	6.22mm

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.1 A
Maximum Drain Source Voltage	800 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.44 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Width	2.38mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	6.73mm
Typical Gate Charge @ Vgs	11 nC @ 10 V
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	6.22mm

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK Vishay SIHU4N80AE-GE3

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