Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK SIHU4N80AE-GE3

Bulk discount available

Subtotal (1 tube of 75 units)*

£75.675

(exc. VAT)

£90.825

(inc. VAT)

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Units
Per unit
Per Tube*
75 - 75£1.009£75.68
150 - 300£0.756£56.70
375 +£0.625£46.88

*price indicative

RS Stock No.:
188-4879
Mfr. Part No.:
SIHU4N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

800 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.44 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Length

6.73mm

Number of Elements per Chip

1

Width

2.38mm

Maximum Operating Temperature

+150 °C

Height

6.22mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

E Series Power MOSFET

Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)

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