Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK SIHU4N80AE-GE3

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Subtotal (1 pack of 5 units)*

£7.26

(exc. VAT)

£8.71

(inc. VAT)

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  • Shipping from 05 January 2026
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Units
Per unit
Per Pack*
5 - 45£1.452£7.26
50 - 120£1.32£6.60
125 - 245£1.248£6.24
250 - 495£1.188£5.94
500 +£1.162£5.81

*price indicative

Packaging Options:
RS Stock No.:
188-4943
Mfr. Part No.:
SIHU4N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

800 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.44 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

6.73mm

Width

2.38mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

11 nC @ 10 V

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

6.22mm

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