Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF
- RS Stock No.:
- 178-0818
- Mfr. Part No.:
- IRFBE30PBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£50.70
(exc. VAT)
£60.85
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,600 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.014 | £50.70 |
| 100 - 200 | £0.882 | £44.10 |
| 250 + | £0.75 | £37.50 |
*price indicative
- RS Stock No.:
- 178-0818
- Mfr. Part No.:
- IRFBE30PBF
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.1 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.1 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 78 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.7mm | ||
Length 10.41mm | ||
Height 9.01mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- Vishay N-Channel MOSFET 800 V, 3-Pin TO-220AB IRFBE30PBF
- Vishay N-Channel MOSFET 800 V, 3-Pin IPAK SIHU4N80AE-GE3
- Vishay N-Channel MOSFET 800 V, 3-Pin TO-220AB IRFBE20PBF
- Vishay N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- Infineon HEXFET N-Channel MOSFET 20 V, 3-Pin SOT-23 IRLML6246TRPBF
- Diodes Inc Dual N-Channel MOSFET 60 V, 8-Pin SOIC DMN6070SSD-13
- Vishay E N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP17N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP15N80AE-GE3