Vishay P-Channel MOSFET, 4.1 A, 250 V, 3-Pin TO-220FP IRFI9634GPBF
- RS Stock No.:
- 708-4780
- Mfr. Part No.:
- IRFI9634GPBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£9.37
(exc. VAT)
£11.245
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 55 unit(s) ready to ship
- Plus 1,000 unit(s) shipping from 04 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.874 | £9.37 |
| 50 - 120 | £1.594 | £7.97 |
| 125 - 245 | £1.498 | £7.49 |
| 250 - 495 | £1.406 | £7.03 |
| 500 + | £1.312 | £6.56 |
*price indicative
- RS Stock No.:
- 708-4780
- Mfr. Part No.:
- IRFI9634GPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4.1 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 35 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 9.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 4.1 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 35 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 9.8mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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