Vishay N-Channel MOSFET, 6.6 A, 500 V, 3-Pin TO-220FP IRFIB7N50APBF

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Packaging Options:
RS Stock No.:
541-1966
Mfr. Part No.:
IRFIB7N50APBF
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.6 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

520 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

52 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Height

9.8mm

Minimum Operating Temperature

-55 °C

N-Channel MOSFET, 500V, Vishay Semiconductor


The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.

Operating junction and storage temperature range - 55 to + 150°C


MOSFET Transistors, Vishay Semiconductor

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