Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

Bulk discount available

Subtotal (1 tube of 50 units)*

£53.60

(exc. VAT)

£64.30

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Tube*
50 - 50£1.072£53.60
100 - 200£1.008£50.40
250 - 450£0.911£45.55
500 - 1200£0.858£42.90
1250 +£0.804£40.20

*price indicative

RS Stock No.:
180-8316
Mfr. Part No.:
IRFBE30LPBF
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Pin Count

3

Maximum Drain Source Resistance Rds

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.8V

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

78nC

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay IRFBE30L is a N-channel power MOSFET having drain to source(Vds) voltage of 800V.The gate to source voltage(VGS) is 20V. It is having I2PAK (TO-262) and D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 3ohms at 10VGS. Maximum drain current 4.1 A.

Dynamic dV/dt rating

Repetitive avalanche rated

Fast switching

Related links