Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220AB
- RS Stock No.:
- 210-4991
- Mfr. Part No.:
- SIHP15N80AE-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
£63.50
(exc. VAT)
£76.00
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 850 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.27 | £63.50 |
| 100 - 200 | £1.194 | £59.70 |
| 250 - 450 | £1.08 | £54.00 |
| 500 - 1200 | £1.016 | £50.80 |
| 1250 + | £0.953 | £47.65 |
*price indicative
- RS Stock No.:
- 210-4991
- Mfr. Part No.:
- SIHP15N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 27.69mm | |
| Width | 9.96mm | |
| Height | 4.24mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 27.69mm | ||
Width 9.96mm | ||
Height 4.24mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - SIHP15N80AE-GE3
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-conversion roles in industrial and electronics systems. It is built for through-hole mounting in a TO-220AB package and supports demanding thermal and electrical environments, offering a balance of voltage tolerance and current handling for use in controllers, converters and power stages.
Features and Benefits:
• 800V drain-source voltage enables high-voltage switching applications • 13A continuous drain current supports moderate load currents • 304mΩ on-resistance minimises conduction losses • 156W power dissipation permits substantial thermal throughput • 53nC typical gate charge allows controlled switching dynamics • 30V gate-source limit ensures robust gate-drive margin
Applications
• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive front ends • Used for switched-mode power supply primary switches • Can be used for power-factor correction stages • Used with gate drivers in medium-power inverter designs
What temperature range can it operate within?
It functions across -55°C to 150°C, allowing use in a wide span of ambient and elevated operating temperatures.
Which mounting style does it require for assembly?
It is intended for through-hole installation on a PCB using the TO-220AB package and its three pins.
What gate-drive considerations should be observed?
Keep gate drive within ±30V maximum and account for typical 53nC gate charge when sizing driver current for the desired switching speed.
How should thermal management be handled for reliable operation?
Use a suitable heatsink or thermal Interface to maintain junction temperatures below rated limits given the 156W dissipation capability and application-specific duty cycles.
Related links
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SIHP15N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHG15N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220