Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

£65.00

(exc. VAT)

£78.00

(inc. VAT)

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50 - 50£1.30£65.00
100 - 200£1.04£52.00
250 +£0.91£45.50

*price indicative

RS Stock No.:
210-4969
Mfr. Part No.:
SIHB15N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

304mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

158W

Typical Gate Charge Qg @ Vgs

35nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

14.61mm

Height

4.06mm

Width

9.65mm

Automotive Standard

No

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHB15N80AE-GE3


This power MOSFET is a high-voltage N-channel transistor intended for power switching in industrial electronics. It is designed for surface-mount assembly in TO-263 packages and operates across a wide thermal range for demanding applications where robust voltage handling and Compact mounting are required.

Features and Benefits:


• 800V drain rating enables high-voltage switching applications • 13 A continuous drain current supports substantial load currents • 304 mΩ Rds(on) reduces conduction losses during operation • 35 nC typical gate charge enables efficient switching control • 30V maximum gate drive accommodates common gate-drive voltages • 156W power dissipation improves thermal handling under load

Applications


• Suitable for high-voltage motor drive stages in automation systems • Ideal for power supplies requiring Compact surface-mount switches • Used for industrial inverter and converter switching duties • Can be used for high-voltage protection and clamp circuits

What temperature range can it operate across?


It functions from -55 °C up to a maximum junction temperature of 150 °C for high-temperature environments.

What package and mounting method does it use?


It is supplied in a TO-263 package intended for surface-mount installation on boards.

What gate drive limitations should designers observe?


The device must not exceed a gate-to-source voltage of 30V to avoid gate stress.

How does its power dissipation influence thermal design?


The 156W rating guides heatsinking and PCB copper allocation to keep junction temperatures within limits.

What pin configuration is provided?


The component offers a three-pin arrangement compatible with standard power MOSFET layouts.

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