Vishay E Series Dual N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK SIHB120N60E-T1-GE3
- RS Stock No.:
- 228-2841
- Mfr. Part No.:
- SIHB120N60E-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 800 units)*
£1,608.00
(exc. VAT)
£1,928.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
800 + | £2.01 | £1,608.00 |
*price indicative
- RS Stock No.:
- 228-2841
- Mfr. Part No.:
- SIHB120N60E-T1-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 25 A | |
Maximum Drain Source Voltage | 650 V | |
Series | E Series | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.12 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 650 V | ||
Series E Series | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.12 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
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