Vishay E Type N-Channel MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3
- RS Stock No.:
- 228-2842
- Mfr. Part No.:
- SIHB120N60E-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
£9.06
(exc. VAT)
£10.88
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 796 unit(s) shipping from 11 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £4.53 | £9.06 |
| 20 - 98 | £4.395 | £8.79 |
| 100 - 198 | £4.215 | £8.43 |
| 200 - 498 | £3.985 | £7.97 |
| 500 + | £3.755 | £7.51 |
*price indicative
- RS Stock No.:
- 228-2842
- Mfr. Part No.:
- SIHB120N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
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