Vishay E Type N-Channel Power MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3
- RS Stock No.:
- 228-2842
- Mfr. Part No.:
- SIHB120N60E-T1-GE3
- Brand:
- Vishay
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £4.53 | £9.06 |
| 20 - 98 | £4.395 | £8.79 |
| 100 - 198 | £4.215 | £8.43 |
| 200 - 498 | £3.985 | £7.97 |
| 500 + | £3.755 | £7.51 |
*price indicative
- RS Stock No.:
- 228-2842
- Mfr. Part No.:
- SIHB120N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 25A Continuous Drain Current - SIHB120N60E-T1-GE3
This power MOSFET is a high-voltage switching transistor designed for surface‑mount applications in industrial and automation environments. It functions as an N‑channel enhancement device suited to power conversion and switching tasks where robust voltage handling and substantial current flow are required. The component is supplied in a TO‑263 package with three terminals and is intended for use across a wide temperature range.
Features and Benefits:
• 650V drain-source rating enables high‑voltage switching
• 25A continuous drain current supports sustained load conditions
• 120mΩ on‑resistance reduces conduction losses under load
• 179W power dissipation allows substantial thermal headroom
• 30V gate tolerance permits flexible gate‑drive voltages
• Typical gate charge 30nC speeds switching transitions
• 25A continuous drain current supports sustained load conditions
• 120mΩ on‑resistance reduces conduction losses under load
• 179W power dissipation allows substantial thermal headroom
• 30V gate tolerance permits flexible gate‑drive voltages
• Typical gate charge 30nC speeds switching transitions
Applications
• Suitable for industrial motor‑drive converters handling high voltages
• Ideal for SMPS and power‑supply front‑end switching stages
• Used for LED drivers and lamp control requiring high VDS
• Can be used for inverter stages in renewable‑energy systems
• Suitable for general‑purpose high‑voltage power switching in automation
• Ideal for SMPS and power‑supply front‑end switching stages
• Used for LED drivers and lamp control requiring high VDS
• Can be used for inverter stages in renewable‑energy systems
• Suitable for general‑purpose high‑voltage power switching in automation
What temperature extremes can this device tolerate during operation?
It is rated to operate down to -55°C and up to 150°C, allowing use in harsh thermal environments.
How does the package influence mounting and thermal performance?
The TO‑263 surface‑mount package facilitates soldered board mounting and offers a thermal path suitable for heatsinking via PCB copper and external attachments.
What gate‑drive considerations should be observed for reliable switching?
Keep gate voltage within ±30V and account for the typical 30nC gate charge when designing driver circuitry to ensure adequate drive current and switching speed.
Are there constraints on automotive use?
It is not specified as meeting automotive standards, so it should not be assumed suitable for certified automotive applications.
Related links
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