Vishay E Type N-Channel Power MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK
- RS Stock No.:
- 228-2871
- Mfr. Part No.:
- SiHH080N60E-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£5,910.00
(exc. VAT)
£7,080.00
(inc. VAT)
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- Shipping from 30 November 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £1.97 | £5,910.00 |
*price indicative
- RS Stock No.:
- 228-2871
- Mfr. Part No.:
- SiHH080N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 184W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK | ||
Series E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 184W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 32A Continuous Drain Current - SiHH080N60E-T1-GE3
This power MOSFET is a high-voltage N-channel switching device designed for demanding power conversion and control tasks. It operates across a wide temperature range and is intended for surface-mounted applications where compact, robust switching performance is required. The component delivers substantial continuous current capability while supporting high drain-to-source voltages for use in industrial and electronic power stages.
Features and Benefits:
• 650V drain-to-source rating enables high-voltage switching
• 32A continuous drain current supports sustained load handling
• 70mΩ Rds(on) reduces conduction losses during operation
• 42nC typical gate charge improves switching speed control
• 184W power dissipation allows significant thermal throughput
• 150°C maximum operating temperature tolerates elevated junctions
• 32A continuous drain current supports sustained load handling
• 70mΩ Rds(on) reduces conduction losses during operation
• 42nC typical gate charge improves switching speed control
• 184W power dissipation allows significant thermal throughput
• 150°C maximum operating temperature tolerates elevated junctions
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive front-ends
• Used for power factor correction stages in converters
• Can be used for resonant and hard-switching inverter legs
• Used with discrete transistor arrays in power management modules
• Ideal for industrial motor drive front-ends
• Used for power factor correction stages in converters
• Can be used for resonant and hard-switching inverter legs
• Used with discrete transistor arrays in power management modules
What gate voltage range is safe for control circuitry?
The gate may be driven up to 30V relative to source
control logic should remain within this limit to protect the gate oxide.
How does the package affect board-level thermal design?
The PowerPAK surface-mount package with four pins requires thermal vias or heatsinking on the PCB to dissipate up to 184W under specified conditions.
What environmental extremes can the device withstand?
It is rated for continuous operation down to -55°C and up to 150°C, allowing use across wide ambient and junction temperature swings.
What type of channel conduction does the device provide?
It is an enhancement-mode N-channel device, conducting when a positive gate-to-source voltage is applied.
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