Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3
- RS Stock No.:
- 653-177
- Mfr. Part No.:
- SIHM080N60E-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£8,580.00
(exc. VAT)
£10,290.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £2.86 | £8,580.00 |
*price indicative
- RS Stock No.:
- 653-177
- Mfr. Part No.:
- SIHM080N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK | |
| Series | E | |
| Mount Type | PCB | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Width | 7.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK | ||
Series E | ||
Mount Type PCB | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Width 7.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Series E Power MOSFET, 600V Drain Source Voltage, 51A Drain Current - SIHM080N60E-T1-GE3
This power MOSFET is a high-voltage switching device intended for power-conversion and control applications in industrial electronics. It functions as an enhancement-mode N-channel transistor designed to handle high drain-to-source voltages while operating on PCB-mounted assemblies. Its construction suits demanding thermal environments and standard manufacturing processes.
Features and Benefits:
• 600V rating for high-voltage switching applications • 51 A continuous drain current for substantial load handling • 0.084 Ω Rds(on) for reduced conduction losses • 42 nC typical gate charge for predictable gate-drive sizing • 500W power dissipation for elevated power-handling capability • 150 °C maximum operating temperature for high-temperature tolerance
Applications
• Suitable for switch-mode power supplies in industrial automation • Ideal for motor-drive inverter stages in manufacturing equipment • Used for high-voltage DC-DC converters in power distribution • Can be used for hard-switched topologies in testing rigs • Suitable for intermediate circuits in renewable-energy inverters
What mounting style is required for circuit implementation?
It is designed for PCB mounting using a PowerPAK package with four pins to facilitate thermal and electrical connection.
How should gate-drive voltages be selected?
Gate-drive amplitude must not exceed the ±30V gate-source limit and should be chosen to balance switching speed with the 42 nC gate charge to control losses.
What ambient temperature range can it operate within?
The device supports operation down to -55 °C and up to 150 °C junction temperature, enabling use across wide environmental conditions.
How does the package assist thermal management?
The PowerPAK form factor provides a Compact thermal path to the PCB, helping to dissipate up to the specified 500W under appropriate board-level cooling strategies.
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