Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3
- RS Stock No.:
- 279-9928
- Mfr. Part No.:
- SIHR080N60E-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£8,310.00
(exc. VAT)
£9,960.00
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 01 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £2.77 | £8,310.00 |
*price indicative
- RS Stock No.:
- 279-9928
- Mfr. Part No.:
- SIHR080N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | 8x8LR | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type 8x8LR | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 51A Maximum Continuous Drain Current - SIHR080N60E-T1-GE3
This power MOSFET is a high-voltage, N‑channel enhancement device designed for demanding power conversion and switching roles in surface‑mount applications. It offers a combination of high blocking voltage, substantial continuous current capability and a gate voltage rating suitable for common drive circuits, making it appropriate for systems that need compact, high‑power switching in constrained layouts.
Features and Benefits:
• 600V blocking capability enables high‑voltage system use
• 51A continuous current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 500W power dissipation allows sustained high‑power handling
• 63nC typical gate charge enables predictable switching behaviour
• 30V gate rating protects against excessive gate drive voltages
• 51A continuous current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 500W power dissipation allows sustained high‑power handling
• 63nC typical gate charge enables predictable switching behaviour
• 30V gate rating protects against excessive gate drive voltages
Applications
• Suitable for high‑voltage switch‑mode power supplies
• Ideal for industrial motor drive front‑ends
• Used with renewable energy inverter stages
• Can be used for power‑factor correction circuits
• Appropriate for medium‑power welding and induction heating
• Ideal for industrial motor drive front‑ends
• Used with renewable energy inverter stages
• Can be used for power‑factor correction circuits
• Appropriate for medium‑power welding and induction heating
What temperature range can it tolerate in harsh environments?
It operates across -55°C to 150°C, permitting use in wide thermal conditions without derating for moderate‑temperature excursions.
How does the package support compact PCB designs?
The 8‑pin surface‑mount 8x8LR footprint enables dense board placement while providing adequate thermal and electrical connectivity.
What is the forward voltage during conduction and its impact?
Typical forward voltage is 1.2V, which influences on‑state voltage drop and must be considered in thermal and efficiency calculations.
Is this device suitable for automotive specification requirements?
It is not specified as automotive‑grade, so it should not be assumed compliant with automotive‑specific standards for vehicle electronics.
Related links
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 4-Pin PowerPAK
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3