Vishay Type N-Channel MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- RS Stock No.:
- 252-0268
- Mfr. Part No.:
- SIHK185N60E-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
£7.97
(exc. VAT)
£9.564
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,050 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £3.985 | £7.97 |
| 20 - 48 | £3.745 | £7.49 |
| 50 - 98 | £3.385 | £6.77 |
| 100 - 198 | £3.19 | £6.38 |
| 200 + | £2.99 | £5.98 |
*price indicative
- RS Stock No.:
- 252-0268
- Mfr. Part No.:
- SIHK185N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.05mΩ | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 132W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.05mΩ | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 132W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Kelvin connection for reduced gate noise
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