Vishay E Series Dual N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK SIHB120N60E-T5-GE3
- RS Stock No.:
- 228-2843
- Mfr. Part No.:
- SIHB120N60E-T5-GE3
- Brand:
- Vishay
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 228-2843
- Mfr. Part No.:
- SIHB120N60E-T5-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK (TO-263) | |
| Series | E Series | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.12 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Series E Series | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.12 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
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