Vishay E Series Dual N-Channel MOSFET, 21 A, 800 V, 3-Pin D2PAK SIHB24N80AE-GE3

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Bulk discount available

Subtotal (1 pack of 2 units)*

£4.82

(exc. VAT)

£5.78

(inc. VAT)

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Being discontinued
  • Final 944 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 18£2.41£4.82
20 - 48£2.17£4.34
50 - 98£2.045£4.09
100 - 198£1.925£3.85
200 +£1.785£3.57

*price indicative

Packaging Options:
RS Stock No.:
228-2847
Mfr. Part No.:
SIHB24N80AE-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

800 V

Package Type

D2PAK (TO-263)

Series

E Series

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.184 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

2

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))

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