Vishay N-Channel MOSFET, 17.4 A, 800 V, 3-Pin TO-247AC SIHG21N80AE-GE3
- RS Stock No.:
- 188-4876
- Mfr. Part No.:
- SIHG21N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 25 units)*
£74.95
(exc. VAT)
£89.95
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 25 unit(s) ready to ship
- Plus 999,999,950 unit(s) shipping from 24 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | £2.998 | £74.95 |
| 50 - 100 | £2.818 | £70.45 |
| 125 + | £2.548 | £63.70 |
*price indicative
- RS Stock No.:
- 188-4876
- Mfr. Part No.:
- SIHG21N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.4 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 235 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 32 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 5.31mm | |
| Length | 15.87mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.82mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.4 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 235 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 32 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 5.31mm | ||
Length 15.87mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 20.82mm | ||
Forward Diode Voltage 1.2V | ||
E Series Power MOSFET.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low effective capacitance (Co(er))
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
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