Vishay E N-Channel MOSFET, 17.4 A, 800 V, 3-Pin D2PAK SIHB21N80AE-GE3

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Subtotal (1 tube of 50 units)*

£97.40

(exc. VAT)

£116.90

(inc. VAT)

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Last RS stock
  • Final 2,750 unit(s), ready to ship
Units
Per unit
Per Tube*
50 - 50£1.948£97.40
100 - 200£1.598£79.90
250 +£1.461£73.05

*price indicative

RS Stock No.:
210-4976
Mfr. Part No.:
SIHB21N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

17.4 A

Maximum Drain Source Voltage

800 V

Package Type

D2PAK (TO-263)

Series

E

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.205 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 17.4 A drain current.

Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)

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