Vishay E Series Dual N-Channel MOSFET, 21 A, 800 V, 3-Pin D2PAK SIHB24N80AE-GE3
- RS Stock No.:
- 228-2846
- Mfr. Part No.:
- SIHB24N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£88.50
(exc. VAT)
£106.00
(inc. VAT)
FREE delivery for orders over £50.00
Being discontinued
- Final 900 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.77 | £88.50 |
| 100 - 200 | £1.54 | £77.00 |
| 250 + | £1.31 | £65.50 |
*price indicative
- RS Stock No.:
- 228-2846
- Mfr. Part No.:
- SIHB24N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | D2PAK (TO-263) | |
| Series | E Series | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.184 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type D2PAK (TO-263) | ||
Series E Series | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.184 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Low effective capacitance (Co(er))
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